Multilayered Barium Titanate Thin Films by Sol-Gel Method for Nonvolatile Memory Application

被引：19
作者：
Chang, Yu-Chi [1 ]
Xue, Ren-Yang [1 ]
Wang, Yeong-Her [1 ]
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Adv Optoelect Technol Ctr, Tainan 701, Taiwan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 12期
关键词：
Barium titanate (BTO); memory; multilayer; resistive random access memory (RRAM); sol-gel; RESISTIVE SWITCHING PROPERTIES; DIELECTRIC-PROPERTIES; MECHANISM;
D O I：
10.1109/TED.2014.2363651
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The modification of multispin casting multilayered barium titanate (BTO) thin films on indium tin oxide (ITO)/glass substrate without doping other elements is adopted to improve the memory performance. The X-ray photoelectron spectroscopy analysis reveals the concentration of oxygen vacancies can be reduced by the increasing number of the BTO layer. Mechanisms of conducting paths relating to the concentration of oxygen vacancies will also be explicated. The memory devices showed typical bipolar resistive switching behavior and an ON/OFF ratio of over 10(6). The memory devices also exhibited outstanding uniformity. A retention time of over 10(5) s without fluctuation at room temperature and 85 degrees C can be achieved.
引用
收藏
页码：4090 / 4097
页数：8
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