Identification of Neel Vector Orientation in Antiferromagnetic Domains Switched by Currents in NiO/Pt Thin Films

被引：30

作者：

Schmitt, C. ^{[1
]}

Baldrati, L. ^{[1
]}

Sanchez-Tejerina, L. ^{[2
,3
]}

Schreiber, F. ^{[1
]}

Ross, A. ^{[1
,4
]}

Filianina, M. ^{[1
,4
]}

Ding, S. ^{[1
,4
,5
]}

Fuhrmann, F. ^{[1
]}

Ramos, R. ^{[6
,13
]}

Maccherozzi, F. ^{[7
]}

Backes, D. ^{[7
]}

Mawass, M-A ^{[8
]}

Kronast, F. ^{[8
]}

Valencia, S. ^{[8
]}

Saitoh, E. ^{[6
,9
,10
,11
,12
]}

Finocchio, G. ^{[2
]}

Klaeui, M. ^{[1
,4
]}

机构：

[1] Johannes Gutenberg Univ Mainz, Inst Phys, D-55128 Mainz, Germany

[2] Univ Messina, Dept Math & Comp Sci Phys Sci & Earth Sci, I-98166 Messina, Italy

[3] Univ Messina, Dept Biomed Dent Morphol & Funct Imaging Sci, I-98125 Messina, Italy

[4] Grad Sch Excellence Mat Sci Mainz, D-55128 Mainz, Germany

[5] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[6] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

[7] Diamond Light Source, Harwell Sci & Innovat Campus, Didcot OX11 0DE, Oxon, England

[8] Helmholtz Zentrum Berlin Mat & Energie, Albert Einstein Str 15, D-12489 Berlin, Germany

[9] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[10] Univ Tokyo, Inst AI & Beyond, Tokyo 1138656, Japan

[11] Tohoku Univ, Ctr Spintron Res Network, Sendai, Miyagi 9808577, Japan

[12] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

[13] Univ Santiago de Compostela, Ctr Res Biol Chem & Mol Mat CIQUS, Dept Quim Fis, Santiago De Compostela 15782, Spain

来源：

PHYSICAL REVIEW APPLIED | 2021年 / 15卷 / 03期

基金：

欧盟地平线“2020”;

关键词：

NEUTRON; TORQUE;

D O I：

10.1103/PhysRevApplied.15.034047

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Understanding the electrical manipulation of the antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequencies. Focusing on collinear insulating antiferromagnetic NiO/Pt thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the Neel-vector direction changes. We demonstrate electrical switching between different T domains by current pulses, finding that the Neel-vector orientation in these domains is along [+/- 5 +/- 5 19], different compared to the bulk (112) directions. The final state of the in-plane component of the Neel vector nIP after switching by current pulses j along the [1 +/- 1 0] directions is nIP 11 j. By comparing the observed Neel-vector orientation and the strain in the thin films, assuming that this variation arises solely from magnetoelastic effects, we quantify the order of magnitude of the magnetoelastic coupling coefficient as b0 + 2b1 = 3 x 107J/m3. This information is key for the understanding of current-induced switching in antiferromagnets and for the design and use of such devices as active elements in spintronic devices. <comment>Superscript/Subscript Available</comment

引用

页数：10

共 35 条

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