Spin Hall magnetoresistance in an antiferromagnetic magnetoelectric Cr2O3/heavy-metal W heterostructure

被引：52
|
作者：
Ji, Y. [1 ]
Miao, J. [1 ]
Meng, K. K. [1 ]
Ren, Z. Y. [1 ]
Dong, B. W. [1 ]
Xu, X. G. [1 ]
Wu, Y. [1 ]
Jiang, Y. [1 ]
机构：
[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 26期
基金：
美国国家科学基金会;
关键词：
ELECTRIC CONTROL;
D O I：
10.1063/1.4989680
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The spin Hall magnetoresistance (SMR) effect is studied in a magnetoelectric Cr2O3/heavy-metal W heterostructure. The Cr2O3 film is confirmed as the alpha-phase, and its Neel temperature is determined. A clear SMR behavior is observed at the interface of Cr2O3/W. A nearly 0.1% SMR ratio is achieved under a magnetic field of 9 T, which is larger than the reported value in the SrMnO3/Pt structure. A systematic study on the variations of SMR as functions of the magnetic field and its angle is performed. Our results indicate that the antiferromagnetic magnetoelectric Cr2O3/W structure has a promising prospect application in future spintronic devices. Published by AIP Publishing.
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页数：4
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