X-Ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices

被引：14

作者：

Wang, P. F. ^{[1
]}

Zhang, E. X. ^{[1
]}

Chuang, K. H. ^{[2
]}

Liao, W. ^{[1
]}

Gong, H. ^{[1
]}

Wang, P. ^{[1
]}

Arutt, C. N. ^{[1
]}

Ni, K. ^{[1
]}

McCurdy, M. W. ^{[1
]}

Verbauwhede, I. ^{[3
]}

Bury, E. ^{[2
]}

Linten, D. ^{[2
]}

Fleetwood, D. M. ^{[1
]}

Schrimpf, R. D. ^{[1
]}

Reed, R. A. ^{[1
]}

机构：

[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

[2] IMEC, B-3001 Leuven, Belgium

[3] Katholieke Univ Leuven, Imec COSIC, B-3000 Leuven, Belgium

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2018年 / 65卷 / 08期

关键词：

Hardware security; oxide breakdown; physically unclonable function (PUF); proton; total ionizing dose; X-ray; OXIDE BREAKDOWN; DAMAGE; DEPENDENCE;

D O I：

10.1109/TNS.2017.2789160

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Total ionizing dose effects are investigated on a physically unclonable function (PUF) based on CMOS breakdown. Devices irradiated to 2 Mrad(SiO2) show less than 11% change in current ratio at 1.2 V. The read-out window of programmed PUFs decreases significantly at high-dose proton irradiation, and then recovers back to the original value after annealing. The proton test results for the pFET selector, the unbroken nFET, and the broken nFET indicate that the threshold-voltage shift of the pFET selector contributes mainly to the degradation of the PUF.

引用

页码：1519 / 1524

页数：6

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