Anomalous diamagnetic shift for negative trions in single semiconductor quantum dots

被引：20

作者：

Fu, Y. J.

Lin, S. D. ^{[1
]}

Tsai, M. F. ^{[1
]}

Lin, H. ^{[2
]}

Lin, C. H. ^{[2
]}

Chou, H. Y. ^{[2
]}

Cheng, S. J. ^{[2
]}

Chang, W. H. ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 11期

关键词：

CHARGED EXCITONS; WIRES; SPECTRA; ENERGY;

D O I：

10.1103/PhysRevB.81.113307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the magnetic response of negative trions X- in single self-assembled InAs/GaAs quantum dots. Unlike the conventional quadratic diamagnetic shift for neutral excitons, the observed X- diamagnetic shifts are small and nonquadratic. In particular, we also observed a reversal in sign of the conventional diamagnetic shift. A theoretical analysis indicates that such anomalous behaviors for X- arise from an apparent change in the electron wave function extent after photon emission due to the strong Coulomb attraction induced by the hole in its initial state. This effect can be very pronounced in small quantum dots, where the electron wave function becomes weakly confined and extended much into the barrier region. When the electrons gradually lose confinement, the magnetic response of X- will transit gradually from the usual quadratic diamagnetic shift to a quartic dependence, and finally into a special paramagnetic regime with an overall negative energy shift.

引用

页数：4

共 16 条

[1] Exciton binding energies and diamagnetic shifts in semiconductor quantum wires and quantum dots [J].