Interband optical conductivity of the [001]-oriented Dirac semimetal Cd3As2

被引：107

作者：

Neubauer, D. ^{[1
]}

Carbotte, J. P. ^{[2
,3
]}

Nateprov, A. A. ^{[4
]}

Loehle, A. ^{[1
]}

Dressel, M. ^{[1
]}

Pronin, A. V. ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Phys, Pfaffenwaldring 57, D-70550 Stuttgart, Germany

[2] McMaster Univ, Dept Phys & Astron, Hamilton, ON L8S 4M1, Canada

[3] Canadian Inst Adv Res, Toronto, ON M5G 1Z8, Canada

[4] Moldavian Acad Sci, Inst Appl Phys, Acad Str 5, Kishinev 2028, Moldova

来源：

PHYSICAL REVIEW B | 2016年 / 93卷 / 12期

关键词：

MOBILITY; SPECTRA;

D O I：

10.1103/PhysRevB.93.121202

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We measured the optical reflectivity of [001]-oriented n-doped Cd3As2 in a broad frequency range (50-22 000 cm(-1)) for temperatures from 10 to 300 K. The optical conductivity, sigma(omega) = sigma(1)(omega) + i sigma(2)(omega), is isotropic within the (001) plane; its real part follows a power law, sigma(1)(omega) proportional to 1.65, in a large interval from 2000 to 8000 cm(-1). This behavior is caused by interband transitions between two Dirac bands, which are effectively described by a sublinear dispersion relation, E(k) proportional to vertical bar k vertical bar(0.6). The momentum-averaged Fermi velocity of the carriers in these bands is energy dependent and ranges from 1.2 x 10(5) to 3 x 10(5) m/s, depending on the distance from the Dirac points. We detect a gaplike feature in sigma(1)(omega) and associate it with the Fermi level positioned around 100 meV above the Dirac points.

引用

页数：5

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