We fabricated (C6H5C2H4NH3)(2)Pb1-xSnxBr4 & nbsp;single crystals by the poor-solvent diffusion method and evaluated the & nbsp;photoluminescence & nbsp;(PL) and scintillation properties. In PL emission maps, exciton-emission peaks were observed at 410 and 440 & nbsp;nm. The PL quantum yields of & nbsp;x & nbsp;=& nbsp;0.1, 0.25, and 0.5 samples were 23.3, 24.1, and 19.2% within typical errors (+/- 2%), respectively. In scintillation spectra under X-ray irradiation, the exciton-emission peak was observed at 440 & nbsp;nm. The scintillation light yields of & nbsp;x & nbsp;=& nbsp;0.1, 0.25, and 0.5 samples under 59.5 & nbsp;keV gamma-ray irradiation by & nbsp;Am-241 were estimated to be 14,000, 16,000, and 11,000 & nbsp;ph/MeV within +/- 10% errors, respectively.