Passivation of Germanium by Graphene

被引：28

作者：

Delgado, Richard Rojas ^{[1
]}

Jacobberger, Robert M. ^{[1
]}

Roy, Susmit Singha ^{[1
]}

Mangu, Vijay Saradhi ^{[2
,3
]}

Arnold, Michael S. ^{[1
]}

Cavallo, Francesca ^{[2
,3
]}

Lagally, Max G. ^{[1
]}

机构：

[1] Univ Wisconsin, Dept Mat Sci & Engn, 1509 Univ Ave, Madison, WI 53706 USA

[2] Univ New Mexico, Dept Elect Engn, Albuquerque, NM 87132 USA

[3] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87132 USA

来源：

ACS APPLIED MATERIALS & INTERFACES | 2017年 / 9卷 / 20期

关键词：

graphene; germanium; chemical vapor deposition; oxidation; X-ray photoelectron spectroscopy; MONOLAYER GRAPHENE; RAMAN-SPECTROSCOPY; THERMAL-OXIDATION; NATIVE OXIDES; SURFACE; GE; SUBSTRATE; KINETICS; SILICON; GROWTH;

D O I：

10.1021/acsami.7b03889

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The oxidation of Ge covered with graphene that is either grown on or transferred to the surface is investigated by X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy. Graphene properly grown by chemical vapor deposition on Ge(100), (111), or (110) effectively inhibits room-temperature oxidation of the surface. When graphene is transferred to the Ge surface, oxidation is reduced relative to that on uncovered Ge but has the same power law dependence. We conclude that access to the graphene/Ge interface must occur via defects in the graphene. The excellent passivation provided by graphene grown on Ge should enhance applications of Ge in the electronic-device industry.

引用

页码：17630 / 17637

页数：8

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