High pressure and high temperature X-ray diffraction study of InAs

被引:1
作者
Pascarelli, S
Aquilanti, G
Munsch, P
Itié, JP
机构
[1] European Synchrotron Radiat Facil, F-38043 Grenoble 09, France
[2] Univ Paris 06, Paris, France
关键词
high pressure; III-V semiconductors; phase transition; X-ray diffraction;
D O I
10.1016/S0168-583X(02)01736-6
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The bulk of high pressure experimental data available on A((n))B((8-n)) compounds refers to room temperature (RT) measurements. The P-T phase diagram remains therefore largely unexplored, whereas the few pioneering combined high pressure and temperature investigations are opening a new insight in the structural systematics of this class of compounds. The goal of this work was to investigate the role of temperature in the ZB --> NaCl phase transition in the InAs compound, using energy dispersive X-ray diffraction measurements, and to explore its high pressure behaviour at high temperatures. Our data show that the RT structural sequence is preserved up to T = 470 K but not at T similar to 600 K. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:439 / 443
页数:5
相关论文
共 18 条
[1]  
AQUILANTI G, UNPUB
[2]   A DIAMOND-ANVIL CELL FOR IR MICROSPECTROSCOPY [J].
CHERVIN, JC ;
CANNY, B ;
BESSON, JM ;
PRUZAN, P .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1995, 66 (03) :2595-2598
[3]   Improved calibration of the SrB4O7:Sm2+ optical pressure gauge: Advantages at very high pressures and high temperatures [J].
Datchi, F ;
LeToullec, R ;
Loubeyre, P .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) :3333-3339
[4]  
GARCIA DM, 2002, HIGH PRESSURE RES, V22, P403
[5]   Instability of the high-pressure CsCl structure in most III-V semiconductors [J].
Kim, K ;
Ozolins, V ;
Zunger, A .
PHYSICAL REVIEW B, 1999, 60 (12) :R8449-R8452
[6]   A new high-pressure phase of ZnSe with B9-type structure [J].
Kusaba, K ;
Kikegawa, T .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2002, 63 (04) :651-655
[7]   PRESSURE INDUCED PHASE TRANSITIONS IN SILICON, GERMANIUM AND SOME 3-5 COMPOUNDS [J].
MINOMURA, S ;
DRICKAMER, HG .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (MAY) :451-&
[8]   Theoretical study of the high-pressure phase stability of GaP, InP, and InAs [J].
Mujica, A ;
Needs, RJ .
PHYSICAL REVIEW B, 1997, 55 (15) :9659-9670
[9]   Structural transitions in the group IV, III-V, and II-VI semiconductors under pressure [J].
Nelmes, RJ ;
McMahon, MI .
HIGH PRESSURE IN SEMICONDUCTOR PHYSICS I, 1998, 54 :145-246
[10]   STRUCTURAL STUDIES OF III-V AND GROUP-IV SEMICONDUCTORS AT HIGH-PRESSURE [J].
NELMES, RJ ;
MCMAHON, MI ;
WRIGHT, NG ;
ALLAN, DR ;
LIU, H ;
LOVEDAY, JS .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1995, 56 (3-4) :539-543