Generation of π Modes in Semiconductor Vertical-Cavity Surface-Emitting Lasers

被引：2

作者：

Sokolovskii, G. S. ^{[1
]}

Dudelev, V. V. ^{[1
]}

Monakhov, A. M. ^{[1
]}

Savenko, A. Yu. ^{[2
]}

Blokhin, S. A. ^{[1
]}

Deryagin, A. G. ^{[1
]}

Zolotovskaya, S. A. ^{[1
]}

Kuzmenkov, A. G. ^{[1
]}

Losev, S. N. ^{[1
]}

Luchinin, V. V. ^{[2
]}

Maleev, N. A. ^{[1
]}

Rafailov, E. U. ^{[3
]}

Sibbett, W. ^{[4
]}

Kuchinskii, V. I. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] St Petersburg State Electrotech Univ, St Petersburg 197376, Russia

[3] Univ Dundee, Div Elect Engn & Phys, Dundee DD1 4HN, Scotland

[4] Univ St Andrews, Sch Phys & Astron, St Andrews KY16 9SS, Fife, Scotland

来源：

TECHNICAL PHYSICS LETTERS | 2009年 / 35卷 / 12期

关键词：

WGM LASERS; VCSELS;

D O I：

10.1134/S1063785009120189

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have theoretically and experimentally studied optical emission from the side faces of mesa structures for vertical-cavity surface-emitting lasers (VCSELs). The results of spatially resolved spectral measurements show that a new type of lasing modes is found in VCSELs with circular mesa structures, which corresponds to the pi mode propagation along the mesa diameter with reflection from the sloped walls and the bottom Bragg mirror.

引用

页码：1133 / 1136

页数：4

共 7 条

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