Excitation density dependence of photoluminescence in GaN:Mg

被引：96

作者：

Oh, E ^{[1
]}

Park, H ^{[1
]}

Park, Y ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Photon Lab, Suwon 440600, South Korea

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 01期

关键词：

D O I：

10.1063/1.120647

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Continuous redshift of an emission from 3.23 to 2.85 eV with decreasing excitation density is observed in the photoluminescence spectra of highly doped GaN:Mg. It has been explained by the formation of minibands originating from the overlap of deep levels and shallow acceptor levels. For nominally undoped samples the intensity ratio of a donor-bound exciton line and a donor-acceptor pair line changes dramatically with excitation density due to the limited number of accepters. (C) 1998 American Institute of Physics.

引用

页码：70 / 72

页数：3

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