Low-temperature solid state reaction synthesis and thermoelectric properties of high-performance and low-cost Sb-doped Mg2Si0.6Sn0.4

被引：81

作者：

Liu, Wei ^{[1
]}

Tang, Xinfeng ^{[1
]}

Sharp, Jeff ^{[2
]}

机构：

[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China

[2] Marlow Ind Inc, Dallas, TX 75238 USA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2010年 / 43卷 / 08期

关键词：

THERMAL-CONDUCTIVITY; MG2SI; HOT; SI;

D O I：

10.1088/0022-3727/43/8/085406

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mg2Si1-xSnx compounds are a type of low-price, environment-friendly medium temperature thermoelectric materials with very important prospects for practical application, and the exploration of high performance Mg2Si1-xSnx compounds is currently attracting worldwide interest. In this study, Sb-doped Mg2Si0.6Sn0.4 compounds were prepared through a two-step, low-temperature solid state reaction method combined with the spark plasma sintering technique for rapid densification. The influence of Sb doping amount on the thermoelectric properties of Mg2Si0.6-ySn0.4Sby (0 <= y <= 0.015) compounds was investigated. The solid solubility limit of Sb in Mg2Si0.6Sn0.4 compounds was estimated around y = 0.0125. As y increased, the electrical conductivity of Mg2Si0.6-ySn0.4Sby (0 <= y <= 0.0125) compounds increased considerably, while the absolute value of the Seebeck coefficient and the lattice thermal conductivity decreased. The sample with y = 0.0125 had the highest ZT, reaching 1.11 at 860 K, and the samples with 0.005 <= y <= 0.015 all attained ZT(max) > 0.95. The adopted synthesis process also showed very good repeatability and regularity in obtaining thermoelectric properties, together with the capability of precise composition control of Mg2Si0.6-ySn0.4Sby, making it promising for the practical application of Mg2Si based thermoelectric materials.

引用

页数：6

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