Investigation of hetero-interfaces formed in InP/GaInAs/InP structures with different growth rates

被引：0
|
作者：
Ohtake, Y. [1 ]
Eguchi, T. [1 ]
Miyake, S. [2 ]
Lee, W. S. [2 ]
Tabuchi, M. [3 ]
Takeda, Y. [2 ,3 ]
机构：
[1] Nagoya Univ, Dept Mat Sci & Engn, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Dept Crystalline Mat Sci, Furo Cho, Nagoya, Aichi 4648603, Japan
[3] Nagoya Univ, Venture Business Lab, Furo Cho, Nagoya, Aichi 4648603, Japan
来源：
2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS | 2006年
关键词：
D O I：
10.1109/ICIPRM.2006.1634171
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Compositional grading in InP/Ga(0.47)In(0.53)AS/InP heterostructures was investigated by utilizing the X-ray crystal truncation rod (CTR) scattering measurement. The InP/(Ga0.47In0.53As)-As-./InP structures were grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with various growth rates. The results showed that with decrease of the growth rate, the compositional grading increased at hetero-interfaces. The reason why the compositional grading was enhanced when the growth rate was low can be explained by exchange of atoms and/or roughening of the surface while the GaInAs layer was covered slowly at lower growth rates.
引用
收藏
页码：291 / +
页数：2
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