A non-destructive method for the removal of residual resist in imprinted patterns

被引：12

作者：

Chen, Y ^{[1
]}

Macintyre, DS ^{[1
]}

Thoms, S ^{[1
]}

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Nanoelectr Res Ctr, Glasgow G12 8LT, Lanark, Scotland

来源：

MICROELECTRONIC ENGINEERING | 2003年 / 67-8卷

关键词：

nanoimprint; lithography; residual resist; non-destructive;

D O I：

10.1016/S0167-9317(03)00184-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we describe a bi-layer resist imprinting procedure in which the residual resist remaining after the imprint step was removed by selective dissolution. This eliminates the risk of dry etch damage to the substrate or pattern and variations in the stamp height can be accommodated. The bi-layer comprises a thin layer of Microchem LOR (A) resist with a covering layer of PMMA. Residual resist was removed by selective dissolution in CD26 developer solution and by controlling the dissolution process an undercut profile suitable for lift-off can be obtained. The paper describes several applications of the procedure including the fabrication of imprinted T-shaped metal gates and gratings. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：245 / 251

页数：7

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