Thermal analysis of bipolar microelectronic devices

被引：0

作者：

Aydemir, Mustafa ^{[1
]}

Arici, Muslum ^{[1
]}

Karabay, Hasan ^{[1
]}

机构：

[1] Kocaeli Univ, Fac Engn, Dept Mech Engn, Umuttepe Campus, TR-41380 Kocaeli, Turkey

来源：

HIGH TEMPERATURES-HIGH PRESSURES | 2016年 / 45卷 / 02期

关键词：

Bipolar device; Deep Trench Isolation (DTI); microelectronic device; self-heating; thermal analysis; trench length; EPITAXIAL-BASE TRANSISTORS; MODEL;

D O I：

暂无

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

The effect of Deep Trench Isolation (DTI) length and heat generation rate on the temperature distribution near the heat source region is investigated numerically for trench isolated devices. Computational results show that since trenches restrict to dissipate heat over the lateral sides, large temperature gradients are established in the trench isolated region which may deteriorate the performance of bipolar transistors. Sharp temperature gradients are more pronounced particularly at higher trench lengths and heat generation rates.

引用

页码：155 / 161

页数：7

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