Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET

被引：30

作者：

Chaganti, V. R. Saran Kumar ^{[1
]}

Prakash, Abhinav ^{[2
]}

Yue, Jin ^{[2
]}

Jalan, Bharat ^{[2
]}

Koester, Steven J. ^{[1
]}

机构：

[1] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA

[2] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 09期

基金：

美国国家科学基金会;

关键词：

MESFET; perovskites; stannate; STANNATE; SRTIO3;

D O I：

10.1109/LED.2018.2861320

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The demonstration of SrSnO3 metal-semiconductor field effect transistors (MESFETs) is reported. The device layer structure consists a 28-nm-thick n-type SrSnO3 film on top of an 11-nm-thick undoped SrSnO3 film grown by hybrid molecular beam epitaxy on a (110) GdScO3 substrate. The MESFETs utilize a Pt Schottky gate electrode and diffused Sc Ohmic contacts. A Schottky barrier height of 1.55 eV was extracted for Pt on SrSnO3 using capacitance-voltage measurements. Devices with a gate length of 3 mu m and source-drain spacing of 9 mu m had a drive current of 36 mA/mm at V-GS = +1 V and V-DS = +3.5 V, and a peak extrinsic (intrinsic) transconductance of 17 mS/mm (35 mS/mm).

引用

页码：1381 / 1384

页数：4