Nondestructive depth-resolved spectroscopic investigation of the heavily intermixed In2S3/Cu(In,Ga)Se2 interface

被引:19
作者
Baer, M. [1 ,4 ]
Barreau, N. [5 ]
Couzinie-Devy, F. [5 ]
Pookpanratana, S. [4 ]
Klaer, J. [1 ]
Blum, M. [3 ,4 ]
Zhang, Y. [4 ]
Yang, W. [2 ]
Denlinger, J. D. [2 ]
Schock, H. -W. [1 ]
Weinhardt, L. [3 ]
Kessler, J. [5 ]
Heske, C. [4 ]
机构
[1] Mat & Energie GmbH, Helmholtz Zentrum Berlin, D-14109 Berlin, Germany
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source ALS, Berkeley, CA 94720 USA
[3] Univ Wurzburg, D-97074 Wurzburg, Germany
[4] Univ Nevada, Dept Chem, Las Vegas, NV 89154 USA
[5] Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, UMR 6502, F-44322 Nantes 3, France
关键词
FILM SOLAR-CELLS; SULFIDE BUFFER LAYERS; IN2S3; DEPOSITION; ALCVD; PVD; CU;
D O I
10.1063/1.3425739
中图分类号
O59 [应用物理学];
学科分类号
摘要
The chemical structure of the interface between a nominal In2S3 buffer and a Cu(In,Ga)Se-2 (CIGSe) thin-film solar cell absorber was investigated by soft x-ray photoelectron and emission spectroscopy. We find a heavily intermixed, complex interface structure, in which Cu diffuses into (and Na through) the buffer layer, while the CIGSe absorber surface/interface region is partially sulfurized. Based on our spectroscopic analysis, a comprehensive picture of the chemical interface structure is proposed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3425739]
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页数:3
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共 25 条
[11]   Observation of intermixing at the buried CdS/Cu(In,Ga)Se2 thin film solar cell heterojunction [J].
Heske, C ;
Eich, D ;
Fink, R ;
Umbach, E ;
van Buuren, T ;
Bostedt, C ;
Terminello, LJ ;
Kakar, S ;
Grush, MM ;
Callcott, TA ;
Himpsel, FJ ;
Ederer, DL ;
Perera, RCC ;
Riedl, W ;
Karg, F .
APPLIED PHYSICS LETTERS, 1999, 74 (10) :1451-1453
[12]   An option for the surface science on Cu chalcopyrites: the selenium capping and decapping process [J].
Hunger, R ;
Schulmeyer, T ;
Klein, A ;
Jaegermann, W ;
Sakurai, K ;
Yamada, A ;
Fons, P ;
Matsubara, K ;
Niki, S .
SURFACE SCIENCE, 2004, 557 (1-3) :263-268
[13]   Efficient CuInS2 thin-film solar cells prepared by a sequential process [J].
Klaer, J ;
Bruns, J ;
Henninger, R ;
Seimer, K ;
Klenk, R ;
Ellmer, K ;
Bräunig, D .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (12) :1456-1458
[14]   High-efficiency copper indium gallium diselenide (CIGS) solar cells with indium sulfide buffer layers deposited by atomic layer chemical vapor deposition (ALCVD) [J].
Naghavi, N ;
Spiering, S ;
Powalla, M ;
Cavana, B ;
Lincot, D .
PROGRESS IN PHOTOVOLTAICS, 2003, 11 (07) :437-443
[15]   Improved Cu(In,Ga)(S,Se)(2) thin film solar cells by surface sulfurization [J].
Nakada, T ;
Ohbo, H ;
Watanabe, T ;
Nakazawa, H ;
Matsui, M ;
Kunioka, A .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 49 (1-4) :285-290
[16]   Cu in In2S3: interdiffusion phenomena analysed by high kinetic energy X-ray photoelectron spectroscopy [J].
Pistor, P. ;
Allsop, N. ;
Braun, W. ;
Caballero, R. ;
Camus, C. ;
Fischer, Ch. -H. ;
Gorgoi, M. ;
Grimm, A. ;
Johnson, B. ;
Kropp, T. ;
Lauermann, I. ;
Lehmann, S. ;
Moenig, H. ;
Schorr, S. ;
Weber, A. ;
Klenk, R. .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (05) :1059-1062
[17]   STUDY OF THE CUINSE2/MO THIN-FILM CONTACT STABILITY [J].
RAUD, S ;
NICOLET, MA .
THIN SOLID FILMS, 1991, 201 (02) :361-371
[18]   Inducing and monitoring photoelectrochemical reactions at surfaces and buried interfaces in Cu(In,Ga)(S,Se)2 thin-film solar cells - art. no. 172102 [J].
Reichardt, J ;
Bär, M ;
Grimm, A ;
Kötschau, I ;
Lauermann, I ;
Sokoll, S ;
Lux-Steiner, MC ;
Fischer, CH ;
Heske, C ;
Weinhardt, L ;
Fuchs, O ;
Jung, C ;
Guclat, W ;
Niesen, TP ;
Karg, F .
APPLIED PHYSICS LETTERS, 2005, 86 (17) :1-3
[19]   19.9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81.2% fill factor [J].
Repins, Ingrid ;
Contreras, Miguel A. ;
Egaas, Brian ;
DeHart, Clay ;
Scharf, John ;
Perkins, Craig L. ;
To, Bobby ;
Noufi, Rommel .
PROGRESS IN PHOTOVOLTAICS, 2008, 16 (03) :235-239
[20]   HARTREE-SLATER SUBSHELL PHOTOIONIZATION CROSS-SECTIONS AT 1254 AND 1487EV [J].
SCOFIELD, JH .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1976, 8 (02) :129-137