Acoustoelectric transport at gigahertz frequencies in coated epitaxial graphene

被引：16

作者：

Hernandez-Minguez, A. ^{[1
]}

Tahraoui, A. ^{[1
]}

Lopes, J. M. J. ^{[1
]}

Santos, P. V. ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 19期

关键词：

2-DIMENSIONAL ELECTRON-GAS; SURFACE ACOUSTIC-WAVES; QUANTUM DOTS; PROPAGATION; DIAMOND; FILMS;

D O I：

10.1063/1.4949756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial graphene (EG) produced from SiC surfaces by silicon sublimation is emerging as a material for electronic applications due to its good electronic properties and availability over large areas on a semiconducting substrate. In this contribution, we report on the transport of charge carriers in EG on SiC using high-frequency (>1 GHz) surface acoustic waves (SAWs). In our devices, the EG is coated with hydrogen-silsesquioxane, SiO2, and a ZnO layer. This allows the efficient generation of SAWs and is compatible with the deposition of a metal top gate. Measurements of frequency-and time-resolved power scattering parameters confirm the generation and propagation of SAWs with frequencies of up to more than 7 GHz. Furthermore, the ZnO coating enhances the acoustoelectric currents by two orders of magnitude as compared to our previous uncoated samples. These results are an important step towards the dynamic acoustic control of charge carriers in graphene at gigahertz frequencies. Published by AIP Publishing.

引用

页数：4

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