Epitaxial GaN films deposited on sapphire substrates prepared by the sol-gel method

被引：21
作者：
Sardar, K
Raju, AR
Subbanna, GN
机构：
[1] Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore, Karnataka, India
[2] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India
来源：
SOLID STATE COMMUNICATIONS | 2003年 / 125卷 / 06期
关键词：
semiconductors; thin films; chemical synthesis; luminescence;
D O I：
10.1016/S0038-1098(02)00810-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Thin films of GaN have been successfully deposited on Al2O3 (0001) substrates by the sol-gel technique. The method, in addition to being is simple and cost-effective, results in epitaxial films. The films have been characterized by photoluminescence spectroscopy. (C) 2003 Published by Elsevier Science Ltd.
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页码：355 / 358
页数：4
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