RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots

被引：36
作者：
Markov, VA
Cheng, HH
Chia, CT
Nikiforov, AI
Cherepanov, VA
Pchelyakov, OP
Zhuravlev, KS
Talochkin, AB
McGlynn, E
Henry, MO
机构：
[1] Tohoku Univ, Sci Measurements Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10764, Taiwan
[3] Natl Taiwan Normal Univ, Dept Phys, Taipei 117, Taiwan
[4] Inst Semicond Phys, Novosibirsk 630090, Russia
[5] Dublin City Univ, Sch Phys Sci, Dublin 9, Ireland
来源：
THIN SOLID FILMS | 2000年 / 369卷 / 1-2期
关键词：
germanium; silicon; self-organization; quantum dot;
D O I：
10.1016/S0040-6090(00)00839-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The initial stages of Ge growth on the Si(001)-(2 x 1) surface have been studied by using a RHEED pattern zero-streak profile analysis technique. Thicknesses for {105} and {113} facets formation, corresponding to the nucleation of coherent 'hut'-clusters and dislocated 'dome' three-dimensional (3D) islands respectively, were determined in a growth temperature range of about 200-600 degrees C. Multilayer structures containing ultra-small Ge quantum dots (QDs) with a plane size of about 10 nm and a height of 1.5 nm have been studied by photoluminescence (PL). PL bands assigned to QDs show an intensity comparable to data in the literature, but a band width five times smaller. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：79 / 83
页数：5
相关论文
共 17 条
[1]   THE MEASUREMENT OF INNER POTENTIAL FOR DIAMOND, GERMANIUM AND SILICON [J].
ASHENFORD, DE ;
LISGARTEN, ND .
ACTA CRYSTALLOGRAPHICA SECTION A, 1983, 39 (MAY) :311-314
[2]   Ge Si self-assembled quantum dots grown on Si(001) in an industrial high-pressure chemical vapor deposition reactor [J].
Hernandez, C ;
Campidelli, Y ;
Simon, D ;
Bensahel, D ;
Sagnes, I ;
Patriarche, G ;
Boucaud, P ;
Sauvage, S .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (02) :1145-1148
[3]   Kinetically self-limiting growth of Ge islands on Si(001) [J].
Kästner, M ;
Voigtländer, B .
PHYSICAL REVIEW LETTERS, 1999, 82 (13) :2745-2748
[4]   Vertically self-organized Ge/Si(001) quantum dots in multilayer structures [J].
Le Thanh, V ;
Yam, V ;
Boucaud, P ;
Fortuna, F ;
Ulysse, C ;
Bouchier, D ;
Vervoort, L ;
Lourtioz, JM .
PHYSICAL REVIEW B, 1999, 60 (08) :5851-5857
[5]   In situ RHEED control of direct MBE growth of Ge quantum dots on Si(001) [J].
Markov, VA ;
Nikiforov, AI ;
Pchelyakov, OP .
JOURNAL OF CRYSTAL GROWTH, 1997, 175 :736-740
[6]   Spontaneous self-embedding of three-dimensional SiGe islands [J].
Mateeva, E ;
Sutter, P ;
Lagally, MG .
APPLIED PHYSICS LETTERS, 1999, 74 (04) :567-569
[7]  
MO YW, 1990, PHYS REV LETT, V65, P1020, DOI 10.1142/S0217984990001732
[8]   Self-organized MBE growth of Ge-rich SiGe dots on Si(100) [J].
Schittenhelm, P ;
Gail, M ;
Abstreiter, G .
JOURNAL OF CRYSTAL GROWTH, 1995, 157 (1-4) :260-264
[9]   Modified Stranski-Krastanov growth in stacked layers of self-assembled islands [J].
Schmidt, OG ;
Kienzle, O ;
Hao, Y ;
Eberl, K ;
Ernst, F .
APPLIED PHYSICS LETTERS, 1999, 74 (09) :1272-1274
[10]   Photoluminescence investigation on growth mode changeover of Ge on Si(100) [J].
Sunamura, H ;
Fukatsu, S ;
Usami, N ;
Shiraki, Y .
JOURNAL OF CRYSTAL GROWTH, 1995, 157 (1-4) :265-269
12