Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling

被引：14

作者：

Michalczewski, Krystian ^{[1
]}

Martyniuk, Piotr ^{[2
]}

Kubiszyn, Lukasz ^{[1
]}

Wu, Chao-Hsin ^{[3
]}

Wu, Yuh-Renn ^{[3
]}

Jurenczyk, Jarek ^{[1
]}

Rogalski, Antoni ^{[2
]}

Piotrowski, Jozef ^{[1
]}

机构：

[1] VIGO Syst SA, PL-05850 Ozarow Mazowiecki, Poland

[2] Mil Univ Technol, Inst Appl Phys, PL-00908 Warsaw, Poland

[3] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 09期

关键词：

InAs/InAsSb T2SL; IR detectors; LWIR; VLWIR; PERFORMANCE; DETECTORS;

D O I：

10.1109/LED.2019.2930106

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report on the InAsilnAsSb type-II superlattice (T2SL) detector operating with 50% cut-off wavelength (lambda(c)) similar to 15 mu m for temperatures (T) reached by three-stage thermoelectric (TE) cooling to minimize the detector's volume to reach size, weight, and power (SWaP) conditions. The presented device reaches detectivity (D*) similar to 10(9) Jones (lambda(c) similar to 15 mu m). These results are the first reported on single pixel T2SL InAs/InAsSb photoconductor with lambda(c) similar to 15 mu m where GaAs immersion lens (IL) was implemented and integrated with three-stage Peltier TE cooler.

引用

页码：1396 / 1398

页数：3

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