Colossal dielectric permittivity and electrical properties of the grain boundary of Ca1-3x/2YbxCu3-yMgyTi4O12 (x=0.05, y=0.05 and 0.30)

被引:22
作者
Boonlakhorn, Jakkree [1 ]
Kidkhunthod, Pinit [2 ]
Thongbai, Prasit [3 ]
Maensiri, Santi [4 ]
机构
[1] Khon Kaen Univ, Mat Sci & Nanotechnol Program, Fac Sci, Khon Kaen 40002, Thailand
[2] Synchrotron Light Res Stitute Publ Org, 111 Univ Ave, Nakhon Ratchasima 30000, Thailand
[3] Khon Kaen Univ, Dept Phys, INRC, Fac Sci, Ichon 40002, Thailand
[4] Suranaree Univ Technol, Inst Sci, Sch Phys, Nakhon Ratchasima 30000, Thailand
关键词
Loss tangent; Colossal dielectric; CaCu3Ti4O12; Impedance spectroscopy; Co-doping; CACU3TI4O12; CERAMICS; CONDUCTION BEHAVIOR; NONOHMIC PROPERTIES; TEMPERATURE; PERFORMANCE; CONSTANT;
D O I
10.1016/j.ceramint.2016.02.067
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Dielectric properties of Ca1-3x/2YbxCu3-yMgyTi4O12 (x=0.05, y=0.05 and 030) prepared using a modified sol-gel method and sintered at 1070 degrees C for 4 h were investigated. The mean grain sizes of the CaCu3Ti4O12 and co-doped Ca0.925Yb0.05Cu3-yMgyTi4O12 (y=0.05 and 0.30) ceramics were approximate to 15.86, approximate to 3.37, and approximate to 2.32 mu m, respectively. Interestingly, the dielectric properties can be effectively improved by co-doping with Yb3+ and Mg2+ ions to simultaneously control the microstructure and properties of grain boundaries, respectively. These properties were improved over those of single-doped and un-doped CaCu3Ti4O12 ceramics. A highly frequency independent colossal dielectric permittivity (approximate to 10(4)) in the range of 10(2)-10(6) Hz with very low loss tangent values of 0.018-0.028 at 1 kHz were successfully achieved in the co-doped Ca0.925Yb0.05Cu3-yMgyTi4O12 ceramics. Furthermore, the temperature stability of the colossal dielectric response of Ca1-3x/2YbxCu3-yMgyTi4O12 was also improved to values of less than +/- 15% in the temperature range from -70 to 100 degrees C. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:8467 / 8472
页数:6
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