The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition

被引：19

作者：

Du Ahn, Byung ^{[1
]}

Choi, Dong-won ^{[2
]}

Choi, Changhwan ^{[2
]}

Park, Jin-Seong ^{[2
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

[2] Hanyang Univ, Div Mat Sci & Engn, Seoul 133719, South Korea

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 09期

关键词：

THIN-FILM TRANSISTORS; ELECTRICAL CHARACTERISTICS; PERFORMANCE; INSTABILITY;

D O I：

10.1063/1.4895102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the electrical properties of zinc tin oxide (ZTO) films deposited via atomic layer deposition and compared them to ZnO and SnO2 films as a function of the annealing temperature. The ZTO and ZnO, except for SnO2, films exhibited an electrical transition from a metal to semiconductor characteristics when annealed above 300 degrees C. The X-ray photoelectron spectroscopy analyses indicate that the relative area of the oxygen vacancy-related peak decreased from 58% to 41% when annealing at temperatures above 400 degrees C. Thin film transistors incorporating ZTO active layers demonstrated a mobility of 13.2 cm(2)/V s and a negative bias instability of -0.2 V. (C) 2014 AIP Publishing LLC.

引用

页数：4

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