Magnetic field-induced metal-insulator transitions in graphite and diluted magnetic semiconductors

被引：4
|
作者：
Iye, Y [1 ]
机构：
[1] Univ Tokyo, Inst Solid State Phys, Minato Ku, Tokyo 106, Japan
来源：
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES | 1998年 / 356卷 / 1735期
关键词：
graphite; field-induced transition; phase transition; magnetic semiconductors; magnetoresistance;
D O I：
10.1098/rsta.1998.0155
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Two topical subjects related with the effect of magnetic field on electrical conduction and the metal-insulator transition are discussed. The first topic is an electronic phase transition in graphite, which is interpreted as a manifestation of a nesting-type instability inherent to a one-dimensional narrow Landau sub-band. The second topic is spin-dependent tranport in III-V based diluted magnetic semiconductors; in particular, a large negative magnetoresistance observed in the vicinity of metal-nonmetal transition.
引用
收藏
页码：157 / 171
页数：15
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