共 36 条
Ambient Processed, Water-Stable, Aqueous-Gated sub 1 V n-type Carbon Nanotube Field Effect Transistor
被引:14
作者:

Joshi, Saumya
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机构:
Tech Univ Munich, Dept Elect & Comp Engn, D-80333 Munich, Germany Tech Univ Munich, Dept Elect & Comp Engn, D-80333 Munich, Germany

Bhatt, Vijay Deep
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Tech Univ Munich, Dept Elect & Comp Engn, D-80333 Munich, Germany Tech Univ Munich, Dept Elect & Comp Engn, D-80333 Munich, Germany

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Becherer, Markus
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Tech Univ Munich, Dept Elect & Comp Engn, D-80333 Munich, Germany Tech Univ Munich, Dept Elect & Comp Engn, D-80333 Munich, Germany

Gagliardi, Alessio
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Tech Univ Munich, Dept Elect & Comp Engn, D-80333 Munich, Germany Tech Univ Munich, Dept Elect & Comp Engn, D-80333 Munich, Germany

Lugli, Paolo
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Free Univ Bozen Bolzano, Fac Sci & Technol, I-39100 Bolzano, Italy Tech Univ Munich, Dept Elect & Comp Engn, D-80333 Munich, Germany
机构:
[1] Tech Univ Munich, Dept Elect & Comp Engn, D-80333 Munich, Germany
[2] Univ Warsaw, Fac Chem, PL-02093 Warsaw, Poland
[3] Free Univ Bozen Bolzano, Fac Sci & Technol, I-39100 Bolzano, Italy
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关键词:
MEMBRANE;
VOLTAGE;
D O I:
10.1038/s41598-018-29882-w
中图分类号:
O [数理科学和化学];
P [天文学、地球科学];
Q [生物科学];
N [自然科学总论];
学科分类号:
07 ;
0710 ;
09 ;
摘要:
In this paper we report for the first time an n-type carbon nanotube field effect transistor which is airand water-stable, a necessary requirement for electrolyte gated CMOS circuit operation. The device is obtained through a simple process, where the native p-type transistor is converted to an n-type. This conversion is achieved by applying a tailor composed lipophilic membrane containing ion exchanger on the active channel area of the transistor. To demonstrate the use of this transistor in sensing applications, a pH sensor is fabricated. An electrolyte gated CMOS inverter using the herein proposed novel n-type transistor and a classical p-type transistor is demonstrated.
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