5 GHz band low phase noise Si-CMOS oscillator using FBAR

被引：0

作者：

Tanifuji, Shoichi ^{[1
]}

Ta, Tuan Thanh ^{[1
]}

Kameda, Suguru ^{[1
]}

Takagi, Tadashi ^{[1
]}

Tsubouchi, Kazuo ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

IEICE ELECTRONICS EXPRESS | 2010年 / 7卷 / 03期

关键词：

film bulk acoustic resonator (FBAR); 5; GHz; 90 nm silicon complementary metal oxide semiconductor (Si-CMOS); low phase noise; oscillator;

D O I：

10.1587/elex.7.165

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, low phase noise 5 GHz oscillator is presented. This oscillators designed with 90 nm silicon complementary metal oxide semiconductor (Si-CMOS) process. To achieve low phase noise, we used high Q value film bulk acoustic resonator (FBAR) instead of conventional LC resonant circuit. This FBAR oscillator has phase noise of lower than -130 dBc/Hz at 1MHz offset.

引用

页码：165 / 169

页数：5

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