A silicon Coulomb blockade device with voltage gain

被引：50

作者：

Smith, RA ^{[1
]}

Ahmed, H ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 26期

关键词：

D O I：

10.1063/1.120543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A silicon single electron tunneling transistor (SETT), which shows an inverting voltage gain greater than unity and as high as 3.7, has been fabricated. The blockade voltage as a function of gate voltage shows sawtooth oscillations when biased with a small current and measured at a temperature of 4.2 K. The SETT is fabricated in highly doped and oxidized silicon quantum wires of less than a 40 nm x 50 nm cross section and 1.5 mu m length. (C) 1997 American Institute of Physics. [S0003-6951(97)03452-9].

引用

页码：3838 / 3840

页数：3

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