Ideality factor of GaN-based light-emitting diodes determined by the measurement of photovoltaic characteristics

被引：10

作者：

Kim, Hyun-Joong ^{[1
]}

Ryu, Geun-Hwan ^{[1
]}

Yang, Won-Bo ^{[1
]}

Ryu, Han-Youl ^{[1
]}

机构：

[1] Inha Univ, Dept Phys, Inchon 402751, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2014年 / 65卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

GaN; Light-emitting diode; Ideality factor; Photovoltaic; EFFICIENCY DROOP; RECOMBINATION; TEMPERATURE;

D O I：

10.3938/jkps.65.1639

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present a method for determining the ideality factor of GaN-based light-emitting diodes (LEDs) by using the measured photovoltaic characteristics. The relation between the short-circuit current and the open-circuit voltage is obtained as the incident power of a laser diode emitting at 405 nm is varied, which is used to determine the ideality factor of the LED. From the photovoltaic measurements, the ideality factors of a blue and a green LED are determined to be 1.16 and 1.78, respectively. The ideality factors obtained by using the photovoltaic measurement are found to be much smaller than those obtained by using the I-V curve without illumination, which is believed to result from the different carrier generation and transport mechanisms. Investigating the photovoltaic characteristics of GaN-based LEDs is expected to provide insight into the origin of the high diode ideality factor in GaN-based devices.

引用

收藏

页码：1639 / 1643

页数：5

相关论文

共 34 条

[1] Electrical characteristics of InGaN/GaN light-emitting diodes grown on GaN and sapphire substrates [J].

Cao, XA ;

Teetsov, JM ;

D'Evelyn, MP ;

Merfeld, DW ;

Yan, CH .

APPLIED PHYSICS LETTERS, 2004, 85 (01) :7-9

[2] Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light-emitting diodes [J].

Casey, HC ;

Muth, J ;

Krishnankutty, S ;

Zavada, JM .

APPLIED PHYSICS LETTERS, 1996, 68 (20) :2867-2869

[3] Performance of high-power III-nitride light emitting diodes [J].

Chen, G. ;

Craven, M. ;

Kim, A. ;

Munkholm, A. ;

Watanabe, S. ;

Camras, M. ;

Goetz, W. ;

Steranka, F. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (05) :1086-1092

[4] Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes [J].

David, Aurelien ;

Grundmann, Michael J. ;

Kaeding, John F. ;

Gardner, Nathan F. ;

Mihopoulos, Theodoros G. ;

Krames, Michael R. .

APPLIED PHYSICS LETTERS, 2008, 92 (05)

[5] Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes [J].

Hader, J. ;

Moloney, J. V. ;

Koch, S. W. .

APPLIED PHYSICS LETTERS, 2010, 96 (22)

[6] The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures [J].

Hammersley, S. ;

Watson-Parris, D. ;

Dawson, P. ;

Godfrey, M. J. ;

Badcock, T. J. ;

Kappers, M. J. ;

McAleese, C. ;

Oliver, R. A. ;

Humphreys, C. J. .

JOURNAL OF APPLIED PHYSICS, 2012, 111 (08)

[7] Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop [J].

Iveland, Justin ;

Martinelli, Lucio ;

Peretti, Jacques ;

Speck, James S. ;

Weisbuch, Claude .

PHYSICAL REVIEW LETTERS, 2013, 110 (17)

[8]

Kasap S., 2001, Optoelectronics and photonics

[9] Origin of efficiency droop in GaN-based light-emitting diodes [J].

Kim, Min-Ho ;

Schubert, Martin F. ;

Dai, Qi ;

Kim, Jong Kyu ;

Schubert, E. Fred ;

Piprek, Joachim ;

Park, Yongjo .

APPLIED PHYSICS LETTERS, 2007, 91 (18)

[10] Status and future of high-power light-emitting diodes for solid-state lighting [J].

Krames, Michael R. ;

Shchekin, Oleg B. ;

Mueller-Mach, Regina ;

Mueller, Gerd O. ;

Zhou, Ling ;

Harbers, Gerard ;

Craford, M. George .

JOURNAL OF DISPLAY TECHNOLOGY, 2007, 3 (02) :160-175

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