R&D of diamond films in the Frontier Carbon Technology Project and related topics

被引：25

作者：

Kobashi, K

Nishibayashi, Y

Yokota, Y

Ando, Y

Tachibana, T

Kawakami, N

Hayashi, K

Inoue, K

Meguro, K

Imai, H

Furata, H

Hirao, T

Oura, K

Gotoh, Y

Nakahara, H

Tsuji, H

Ishikawa, J

Koeck, FA

Nernanich, RJ

Sakai, T

Sakuma, N

Yoshida, H

机构：

[1] Osaka Univ, Ctr Adv Res Projects, JFCC, FCT Project, Suita, Osaka 5650871, Japan

[2] Kobe Steel Ltd, Elect Res Lab, FCT Project, JFFCC,Nishi Ku, Kobe, Hyogo 6512271, Japan

[3] Sumitomo Elect Ind Ltd, JFCC, FCT Project, Itami, Hyogo 6640016, Japan

[4] Osaka Univ, Grad Sch Engn, Dept Elect Engn, Suita, Osaka 5650871, Japan

[5] Kyoto Univ, Grad Sch Engn, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan

[6] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA

[7] Toshiba Co Ltd, Corp Res & Dev Ctr, JFCC, FCT Project,Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan

[8] Natl Inst Adv Ind Sci & Technol, Res Ctr Adv Carbon Mat, FCT Lab, JFCC,FCT Project, Tsukuba, Ibaraki 3058565, Japan

来源：

关键词：

diamond films; chemical vapor deposition; etching; field emission;

D O I：

10.1016/S0925-9635(02)00298-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

R&D activities on diamond chemical vapor deposition (CVD) and field emission in the Frontier Carbon Technology Project are presented. The topics are (1) morphology control of diamond films grown by a 60-kW, 915-MHz microwave plasma CVD reactor, (2) growth technology of large single crystal diamond with a low density of defects, (3) heteroepitaxial growth technology of diamond films on Pt, (4) fabrication of sharp emitter tips on single crystal diamond, (5) field emission study from diamond particles, and (6) intense field emission from ion implanted homoepitaxial diamond layer. Research results of field emission obtained by Kyoto University and North Carolina State University are also described. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：233 / 240

页数：8

共 15 条

[1] Large area deposition of ⟨100⟩-textured diamond films by a 60-kW microwave plasma CVD reactor [J].

Ando, Y ;

Yokota, Y ;

Tachibana, T ;

Watanabe, A ;

Nishibayashi, Y ;

Kobashi, K ;

Hirao, T ;

Oura, K .

[2] Study for fabricating large area diamond single-crystal layers [J].

Findeling-Dufour, C ;

Gicquel, A .

THIN SOLID FILMS, 1997, 308 :178-185

[3] Estimation of emission field and emission site of boron-doped diamond thin-film field emitters [J].

Gotoh, Y ;

Kondo, T ;

Nagao, M ;

Tsuji, H ;

Ishikawa, J ;

Hayashi, K ;

Kobashi, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (02) :1018-1023

[4] MOSAIC GROWTH OF DIAMOND [J].

JANSSEN, G ;

GILING, LJ .

[5] Imaging electron emission from diamond film surfaces:: N-doped diamond vs. nanostructured diamond [J].

Köck, FAM ;

Garguilo, JM ;

Nemanich, RJ .

[6]

KOCK FAM, 2000, MATER RES SOC S P, V621, pR651

[7]

MEGURO K, UNPUB DIAM RELAT MAT

[8] Anisotropic etching of a fine column on a single crystal diamond [J].

Nishibayashi, Y ;

Ando, Y ;

Saito, H ;

Imai, T ;

Hirao, T ;

Oura, K .

[9] Homoepitaxial growth on fine columns of single crystal diamond for a field emitter [J].

Nishibayashi, Y ;

Saito, H ;

Imai, T ;

Fujimori, N .

[10]

SAKAI T, P 15 NEW DIAM S NEW, P200

← 1 2 →