Preparation of conductive film via a low temperature synthesis that enables simultaneous nitrogen doping and reduction of graphene oxide

被引：5

作者：

Bhattacharyya, Tamoghna ^{[1
]}

机构：

[1] Ulsan Natl Inst Sci & Technol, Dept Nat Sci, Ulsan 44919, South Korea

来源：

MATERIALS RESEARCH EXPRESS | 2017年 / 4卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

graphene oxide; one-pot reduction; nitrogen doping; electrical conductivity; DOPED GRAPHENE; GRAPHITE OXIDE; SHEETS;

D O I：

10.1088/2053-1591/aa85d8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A low temperature (-78 degrees C), one-pot synthesis that enables the simultaneous reduction of graphene oxide (G-O) and nitrogen doping of reduced graphene oxide (rG-O) is described. The method facilitates the effective removal of oxygen-containing functional groups in the G-O and introduces both 'graphitic' and 'pyridinic' nitrogen up to 4% in the corresponding product. The N-doped materials displayed relatively high powder electrical conductivities (up to 2.5 x 10(3) S m(-1)).

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页数：7

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