Single-Source Precursor for Tungsten Dichalcogenide Thin Films: Mo1-xWxS2 (0 ≤ x ≤ 1) Alloys by Aerosol-Assisted Chemical Vapor Deposition

被引:25
作者
Tedstone, Aleksander A. [1 ]
Lewis, Edward A. [2 ]
Savjani, Nicky [1 ,3 ]
Zhong, Xiang Li [2 ]
Haigh, Sarah J. [2 ]
O'Brien, Paul [1 ,2 ]
Lewis, David J. [2 ]
机构
[1] Univ Manchester, Sch Chem, Oxford Rd, Manchester M13 9PL, Lancs, England
[2] Univ Manchester, Sch Mat, Oxford Rd, Manchester M13 9PL, Lancs, England
[3] Nanoco Technol Ltd, 46 Grafton St, Manchester M13 9NT, Lancs, England
基金
英国工程与自然科学研究理事会;
关键词
MOLYBDENUM-DISULFIDE; MONOLAYER MOS2; COMPLEXES; AACVD; NANOPARTICLES; CVD;
D O I
10.1021/acs.chemmater.6b05271
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Researchers reported the alloying of MoS2 with W by AACVD using WS3 L2 and MoL4 molecular precursors to produce Mo1-XWXS2 polycrystalline thin films over the range 0 ≤ x ≤ 1. The synthesis of the novel air-stable single source precursor WS3 L2 was achieved by the reaction of [NH4]2 WS4 and sodium diethyldithiocarbamate in an acidic medium, to produce WS3 L2 as a dark green powder, accompanied by a small quantity of the tungsten dimer W2 S4 L4 , which was isolated and analyzed separately.
引用
收藏
页码:3858 / 3862
页数:5
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