The effect of traps on the performance of graphene field-effect transistors

被引：15
作者：
Zhu, J. [1 ]
Jhaveri, R. [1 ]
Woo, J. C. S. [1 ]
机构：
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 19期
关键词：
field effect transistors; graphene; EPITAXIAL GRAPHENE; LARGE-AREA; DEVICE; FILMS;
D O I：
10.1063/1.3428785
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper studies the performance degradation of graphene field-effect transistors due to the presence of traps. The mobile charge modulation by gate voltage is degraded because of immobile trapped charges. As a result the current is reduced and the on/off ratio is decreased. Extracted mobility using transconductance method is shown to be underestimated considerably due to the effect of traps.(C) 2010 American Institute of Physics. [doi:10.1063/1.3428785]
引用
收藏
页数：3
相关论文
共 50 条
  • [21] Investigation on MetalOxide Graphene Field-Effect Transistors With Clamped Geometries
    Giambra, Marco A.
    Benz, Christian
    Wu, Fan
    Thuermer, Maximillian
    Balachandran, Geethu
    Benfante, Antonio
    Pernice, Riccardo
    Pandey, Himadri
    Boopathi, Muraleetharan
    Jang, Min-Ho
    Ahn, Jong-Hyun
    Stivala, Salvatore
    Calandra, Enrico
    Arnone, Claudio
    Cusumano, Pasquale
    Busacca, Alessandro
    Pernice, Wolfram H. P.
    Danneau, Romain
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2019, 7 (01): : 964 - 968
  • [22] Graphene field-effect transistors with self-aligned gates
    Farmer, Damon B.
    Lin, Yu-Ming
    Avouris, Phaedon
    APPLIED PHYSICS LETTERS, 2010, 97 (01)
  • [23] Effects of Self-Heating on fT and fmax Performance of Graphene Field-Effect Transistors
    Bonmann, Marlene
    Krivic, Marijana
    Yang, Xinxin
    Vorobiev, Andrei
    Banszerus, Luca
    Stampfer, Christoph
    Otto, Martin
    Neumaier, Daniel
    Stake, Jan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (03) : 1277 - 1284
  • [24] Large Scale Pattern Graphene Electrode for High Performance in Transparent Organic Single Crystal Field-Effect Transistors
    Liu, Wei
    Jackson, Biyun Li
    Zhu, Jing
    Miao, Cong-Qin
    Chung, Choon-Heui
    Park, Young-Ju
    Sun, Ke
    Woo, Jason
    Xie, Ya-Hong
    ACS NANO, 2010, 4 (07) : 3927 - 3932
  • [25] The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties
    Asad, Muhammad
    Bonmann, Marlene
    Yang, Xinxin
    Vorobiev, Andrei
    Jeppson, Kjell
    Banszerus, Luca
    Otto, Martin
    Stampfer, Christoph
    Neumaier, Daniel
    Stake, Jan
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2020, 8 (01): : 457 - 464
  • [26] High resolution potassium sensing with large-area graphene field-effect transistors
    Fakih, Ibrahim
    Centeno, Alba
    Zurutuza, Amaia
    Ghaddab, Boutheina
    Siaj, Mohamed
    Szkopek, Thomas
    SENSORS AND ACTUATORS B-CHEMICAL, 2019, 291 : 89 - 95
  • [27] Epitaxial graphene field-effect transistors on silicon substrates
    Kang, Hyun-Chul
    Karasawa, Hiromi
    Miyamoto, Yu
    Handa, Hiroyuki
    Suemitsu, Tetsuya
    Suemitsu, Maki
    Otsuji, Taiichi
    SOLID-STATE ELECTRONICS, 2010, 54 (09) : 1010 - 1014
  • [28] A review for compact model of graphene field-effect transistors
    Lu, Nianduan
    Wang, Lingfei
    Li, Ling
    Liu, Ming
    CHINESE PHYSICS B, 2017, 26 (03)
  • [29] Unipolar to ambipolar conversion in graphene field-effect transistors
    Feng, Tingting
    Xie, Dan
    Lin, Yuxuan
    Tian, He
    Zhao, Haiming
    Ren, Tianling
    Zhu, Hongwei
    APPLIED PHYSICS LETTERS, 2012, 101 (25)
  • [30] Electrical and Noise Characteristics of Graphene Field-Effect Transistors
    Shur, M.
    Rumyantsev, S.
    Liu, G.
    Balandin, A. A.
    2011 21ST INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2011, : 145 - 149
12345