The effect of traps on the performance of graphene field-effect transistors

被引：15
作者：
Zhu, J. [1 ]
Jhaveri, R. [1 ]
Woo, J. C. S. [1 ]
机构：
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 19期
关键词：
field effect transistors; graphene; EPITAXIAL GRAPHENE; LARGE-AREA; DEVICE; FILMS;
D O I：
10.1063/1.3428785
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper studies the performance degradation of graphene field-effect transistors due to the presence of traps. The mobile charge modulation by gate voltage is degraded because of immobile trapped charges. As a result the current is reduced and the on/off ratio is decreased. Extracted mobility using transconductance method is shown to be underestimated considerably due to the effect of traps.(C) 2010 American Institute of Physics. [doi:10.1063/1.3428785]
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页数：3
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