Indium sulfide buffer layers deposited by dry and wet methods

被引：32
作者：
Asenjo, B. [1 ]
Sanz, C. [1 ]
Guillen, C. [1 ]
Chaparro, A. M. [1 ]
Gutierrez, M. T. [1 ]
Herrero, J. [1 ]
机构：
[1] CIEMAT, Dept Renewable Energies, E-28040 Madrid, Spain
来源：
THIN SOLID FILMS | 2007年 / 515卷 / 15期
关键词：
buffer layer; indium sulfide; characterization;
D O I：
10.1016/j.tsf.2006.12.058
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Indium sulfide (In2S3) thin films have been deposited on amorphous glass, glass coated by tin oxide (TCO) and crystalline silicon substrates by two different methods: modulated flux deposition (MFD) and chemical bath deposition (CBD). Composition, morphology and optical characterization have been carried out with Scanning Electron Microscopy (SEM), IR-visible-UV Spectrophotometry, X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectrometer. Different properties of the films have been obtained depending on the preparation techniques. With MFD, In2S3 films present more compact and homogeneous surface than with CBD. Films deposited by CBD present also indium oxide in their composition and higher absorption edge values when deposited on glass. (C) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：6041 / 6044
页数：4
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