irradiation by X-ray;
photoelectron spectroscopy;
photochemical reaction;
D O I:
10.7498/aps.49.1883
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
ITO surface photochemical reaction induced by soft X-ray (Mg K alpha = 1253.60 eV) irradiation is investigated in-situ by XPS technique. The result shows that the content of In and Sn in the irradiated area goes up with the increasing irradiation time, while that of O falls. The changes of In3d, Sn3d XPS spectra and the Auger Parameter of In, Sn suggest that there is chemical reaction due to X-ray irradiation. It can be concluded that more photo-dissociation happens to In element according to the obvious fact that there exists sub-oxidized state of In after exposure to X-ray. The photochemical reaction mechanism induced by soft X-ray irradiation is discussed.