Molybdenum film technology for power metal oxide semiconductor field effect transistor gate electrode applications

被引:5
作者
Liu, YK
Liang, CG [1 ]
Wang, ZL
He, YZ
Lang, XL
Zhou, MH
机构
[1] Hebei Semicond Res Inst, Shijiazhuang 050051, Hebei, Peoples R China
[2] Lanzhou Univ, Dept Phys, Lanzhou 730000, Peoples R China
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 7A期
关键词
Mo film; MOS gate; power VDMOSFET; stability; reliability;
D O I
10.1143/JJAP.39.3915
中图分类号
O59 [应用物理学];
学科分类号
摘要
Molybdenum (Mo) film as a gate electrode for high-frequency power metal oxide semiconductor field effect transistor (MOSFET) has been investigated. The Mo films were deposited by sputtering in Ar ambient. The Mo films properties depend greatly on the substrate temperature. An accurate pattern was realized for Mo film. Stability and reliability of Mo gates for high-frequency power vertical double-diffused metal oxide semiconductor field effect transistors (VDMOSFETs) are as good as those of polysilicon gates. The shift of threshold voltage is below +/-35 mV and the change of gate-source leakage current is less than 5 nA under the stress condition of +/-5 MV/cm for 100 h at 250 degrees C. Power gain and drain efficiency improvement of Mo gates for VDMOSFETs have been obtained.
引用
收藏
页码:3915 / 3918
页数:4
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