TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate

被引：6

作者：

Cherkashin, NA

Bert, NA

Musikhin, YG

Novikov, SV

Cheng, TS

Foxon, CT

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

来源：

SEMICONDUCTORS | 2000年 / 34卷 / 08期

基金：

俄罗斯基础研究基金会;

关键词：

Microstructure; Microscopy; Electron Microscopy; Transmission Electron Microscopy; Al2O3;

D O I：

10.1134/1.1188090

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Transmission electron microscopy was used to study the microstructure of GaN films undoped or Si-doped to 10(17) or 10(18) cm(-3) and grown by molecular-beam epitaxy on (0001) Al2O3 substrate without nitridation or a buffer layer. Defect structures including inversion domains, nanopipes, and (0001) stacking faults were studied. The influence of Si doping on the threading dislocation density and the dimensions of GaN grains bounded by inversion domains was assessed. Smoothing of the steplike morphology of the GaN film surface occurs at a Si concentration of 10(17) cm(-3). (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：867 / 871

页数：5

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