Synthesis of β-SiC and α-Si3N4 whiskers by the sol-gel process

被引：0

作者：

Semchenko, GD ^{[1
]}

Starolat, EE ^{[1
]}

D'yakonenko, NL ^{[1
]}

机构：

[1] Kharkov State Polytech Univ, Kharkov, Ukraine

来源：

GLASS AND CERAMICS | 1997年 / 54卷 / 5-6期

关键词：

Ethyl Silicate; Silicon Monoxide; Kikuchi Line; Moire Pattern; Filamentary Crystal;

D O I：

10.1007/BF02767967

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A study is reported on a synthesis of alpha-Si3N4 whiskers from a modified ethyl silicate binder. It is noted that crystal growth induces thermal stresses. It is confirmed that such crystals are formed by a dislocation diffusion mechanism.

引用

页码：186 / 189

页数：4

共 13 条

[1]

AILER R, 1982, CHEM SILICON

[2]

FEDOSEEV DV, 1976, IAN SSSR NEORG MATER, V12, P1796

[3]

IVANOVA LM, 1966, IAN SSSR NEORG MATER, V2, P223

[4]

KUKOLEV GV, 1966, CHEM SILICON PHYSICA

[5]

LI JB, 1989, CERAM SOC JPN INT, V97, P864

[6]

REIN RA, 1963, PHYS CHEM, V63, P839

[7]

RISTIC MM, 1968, P 9 C SIL IND SIL BU, P153

[8] CRYSTAL-GROWTH OF SIC WHISKER FROM THE SIO(G)-CO SYSTEM [J].

SAITO, M ;

NAGASHIMA, S ;

KATO, A .

JOURNAL OF MATERIALS SCIENCE LETTERS, 1992, 11 (07) :373-376

[9]

SEMCHENKO GD, 1995, SCI ENG C ENG CHEM U, P16

[10]

SEMCHENKO GD, 1996, 14 UKR C IN CHEM KIE, P197

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