Design of Multi-Wavelength Micro Raman Spectroscopy System and Its Semiconductor Stress Depth Profiling Applications

Design concepts of a newly developed multi-wavelength, micro Raman spectroscopy system for non-contact and non-destructive characterization of semiconductor materials and its performance are introduced. The system is designed to sequentially measure Raman signals under various excitation wavelengths without sample movement or calibration between switching of excitation wavelengths. Area maps of Raman shift, full-width-at-half-maximum (FWHM) and intensity from an advanced memory device were generated and stacked in the order of wavelength (or penetration depth). This unique display of Raman shift, FWHM and intensity, corresponding to crystalline stress, crystallinity and/or scattering probability provides powerful insights into the sample under characterization. (C) 2009 The Japan Society of Applied Physics