A high-order curvature compensation technique for bandgap voltage reference using subthreshold MOSFETs

被引:3
作者
Adl, Ahmad-Hossein [1 ]
El-Sankary, Kamal [1 ]
El-Masry, Ezz [1 ]
机构
[1] Dalhousie Univ, Dept Elect & Comp Engn, Halifax, NS B3J 2X4, Canada
关键词
analogue circuits; integrated circuits; subthreshold; bandgap reference; operational transconductance;
D O I
10.1080/00207211003697863
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A bandgap voltage reference with high-order curvature compensation is presented in this study. It exploits subtraction and derivative equalisation of currents generated from two complementary NMOS and PMOS bandgap references (BGRs) using subthreshold MOSFETs. By equating the derivative with respect to temperature of the two currents, generated by the complementary bandgaps, and subtracting these currents, an accurate high-order curvature compensation is achieved. To overcome problems due to the limited input common-mode range of opamps used in BGRs, a transimpedance amplifier with new accurate current compensation that tracks the temperature variation is proposed. This bandgap is implemented using the 0.18m CMOS process with a supply voltage as low as 0.7V. At 0.8V power supply and an output reference voltage of 386mV, the proposed circuit achieves a temperature coefficient of 19ppm/degrees C from 0 to 130 degrees C. The power consumption is 119W and the power supply reduction ratio is 24dB at 1kHz.
引用
收藏
页码:783 / 796
页数:14
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