Modeling the distribution of Ga and Sb impurities in GeaEuro'Si single crystals grown by double feeding of the melt: Growth conditions for homogeneous single crystals

被引：3

作者：

Aghamaliyev, Z. A. ^{[1
]}

Islamzade, E. M. ^{[1
]}

Azhdarov, G. Kh. ^{[1
]}

机构：

[1] Natl Acad Sci Azerbaijan, Inst Phys, AZ-1143 Baku, Azerbaijan

来源：

CRYSTALLOGRAPHY REPORTS | 2016年 / 61卷 / 02期

关键词：

SEMICONDUCTOR SOLID-SOLUTIONS; CZOCHRALSKI GROWTH; VERTICAL BRIDGMAN; BULK CRYSTALS; SI; COMPONENTS;

D O I：

10.1134/S1063774516020024

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Mathematical modeling of the distribution of Ga and Sb impurities in homogeneous (with respect to the content of the main components) single crystals of Ge-Si alloys, grown by double feeding of the melt, has been performed in the Pfann approximation. It is shown that the axial gradient of impurity concentration in Ge-Si crystals can be controlled in wide limits by changing the ratio of crystallization rate and the rates of feeding of the melt by silicon and germanium rods. The conditions for growing alloy single crystals, homogeneous both with respect to the content of the main components and to the impurity concentration distribution, have been determined.

引用

页码：327 / 330

页数：4

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