Formation of (001)-textured grain in (111) polycrystalline silicon film

被引：2
作者：
Oh, Jae Hwan
Kim, Eun Hyun
Kang, Dong Han
Cheon, Jun Hyuk
Kim, Kyung Ho
Jang, Jin [1 ]
机构：
[1] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea
[2] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
来源：
THIN SOLID FILMS | 2007年 / 515卷 / 12期
关键词：
crystallization; polycrystalline silicon; thin-film transistor;
D O I：
10.1016/j.tsf.2006.10.084
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the formation of (001)-textured gains in (111) polycrystalline silicon (poly-Si) by Ni-mediated crystallization of amorphous silicon (a-Si) using a cap layer (MICC). The a-Si precursor deposited by plasma enhanced chemical vapor deposition was dehydrogenated at 550 degrees C and then crystallized at 580 degrees C. The (001)-textured grains appear in the network of (111) poly-Si of similar to 100 mu m grains, which was confirmed by the analysis of electron back-scattered diffraction. From the kinetic study of the grain growth, it is found that the nucleation rate of (001) nuclei is higher than that of (111) ones, but the (111) grains grow faster than that of (001) grains. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：5054 / 5058
页数：5
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