Utilisation of GaN and InGaN/GaN with nanoporous structures for water splitting

被引：50

作者：

Benton, J. ^{[1
]}

Bai, J. ^{[1
]}

Wang, T. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 22期

基金：

英国工程与自然科学研究理事会;

关键词：

POROUS GAN; OPTICAL-PROPERTIES; HYDROGEN GENERATION; N-GAN; LAYER; FILM;

D O I：

10.1063/1.4903246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a cost-effective approach to the fabrication of GaN based nanoporous structure for applications in renewable hydrogen production. Photoelectrochemical etching in a KOH solution has been employed to fabricate both GaN and InGaN/GaN nanoporous structures with pore sizes ranging from 25 to 60 nm, obtained by controlling both etchant concentration and applied voltage. Compared to as-grown planar devices the nanoporous structures have exhibited a significant increase of photocurrent with a factor of up to four times. An incident photon conversion efficiency of up to 46% around the band edge of GaN has been achieved. (C) 2014 AIP Publishing LLC.

引用

页数：5

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