High-Performance N-type Mg3Sb2 towards Thermoelectric Application near Room Temperature

被引：117

作者：

Zhang, Fan ^{[1
,2
]}

Chen, Chen ^{[1
,2
]}

Yao, Honghao ^{[1
,2
]}

Bai, Fengxian ^{[1
,2
]}

Yin, Li ^{[1
,2
]}

Li, Xiaofang ^{[1
,2
]}

Li, Shan ^{[1
,2
]}

Xue, Wenhua ^{[3
]}

Wang, Yumei ^{[3
]}

Cao, Feng ^{[4
]}

Liu, Xingjun ^{[1
,2
,5
]}

Sui, Jiehe ^{[5
]}

Zhang, Qian ^{[1
,2
]}

机构：

[1] Harbin Inst Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China

[2] Harbin Inst Technol, Inst Mat Genome & Big Data, Shenzhen 518055, Peoples R China

[3] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[4] Harbin Inst Technol, Sch Sci, Shenzhen 518055, Peoples R China

[5] Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150001, Heilongjiang, Peoples R China

来源：

ADVANCED FUNCTIONAL MATERIALS | 2020年 / 30卷 / 05期

关键词：

Mg3Sb2; room temperature; thermal conductivities; thermoelectric; CARRIER SCATTERING MECHANISM; IONIZED-IMPURITY SCATTERING; P-TYPE MG3SB2; THERMAL-CONDUCTIVITY; ZINTL CHEMISTRY; WASTE HEAT; POWER;

D O I：

10.1002/adfm.201906143

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Se-doped Mg3.2Sb1.5Bi0.5-based thermoelectric materials are revisited in this study. An increased ZT value approximate to 1.4 at about 723 K is obtained in Mg3.2Sb1.5Bi0.49Se0.01 with optimized carrier concentration approximate to 1.9 x 10(19) cm(-3). Based on this composition, Co and Mn are incorporated for the manipulation of the carrier scattering mechanism, which are beneficial to the dramatically enhanced electrical conductivity and power factor around room temperature range. Combined with the lowered lattice thermal conductivity due to the introduction of effective phonon scattering centers in Se&Mn-codoped sample, a highest room temperature ZT value approximate to 0.63 and a peak ZT value approximate to 1.70 at 623 K are achieved for Mg3.15Mn0.05Sb1.5Bi0.49Se0.01, leading to a high average ZT approximate to 1.33 from 323 to 673 K. In particular, a remarkable average ZT approximate to 1.18 between the temperature of 323 and 523 K is achieved, suggesting the competitive substitution for the commercialized n-type Bi2Te3-based thermoelectric materials.

引用

页数：7

共 43 条

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