Comparative study between silicon-rich oxide films obtained by LPCVD and PECVD

被引：44

作者：

Morales, A.

Barreto, J.

Dominguez, C.

Riera, M.

Aceves, M.

Carrillo, J.

机构：

[1] IMB CNM, E-08193 Barcelona, Spain

[2] INAOE, Puebla 72000, Mexico

[3] CIDS BUAP, Puebla 72000, Mexico

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2007年 / 38卷 / 1-2期

关键词：

silicon rich oxide; infrared spectroscopy; XPS; photoluminescence;

D O I：

10.1016/j.physe.2006.12.056

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A comparative study of compositional and optical properties of silicon-rich oxide (SRO) films deposited by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) is presented. Infrared spectra revealed the presence of hydrogen bonded to silicon atoms in the SRO-PECVD films, whereas in SRO-LPCVD films the IR spectra looked like the stoichiometric thermal silicon oxide. Moreover, X-ray photoelectron spectroscopy (XPS) studies showed that the SRO-PECVD films contain a higher content of nitrogen than SRO-LPCVD films. In spite of differences, the SRO films obtained by both methods show a strong room-temperature photoluminescence (PL). However, the highest PL intensity was emitted by SRO films obtained by LPCVD. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：54 / 58

页数：5

共 8 条

[1] Comparative investigation of hydrogen bonding in silicon based PECVD grown dielectrics for optical waveguides [J].