Synthesis, characterization, and dielectric properties of β-Gd2(MoO4)3 thin films prepared by chemical solution deposition

A chemical solution was employed for deposition of gadolinium molybdate [beta-Gd-2(MoO4)(3)] thin films. Gadolinium acetylacetonate hydrate {[CH3COCH = C(O-)CH3](3)Gd center dot xH(2)O}, molybdenum isopropoxide {Mo[OCH(CH3)(2)](5)}, and acetylacetone were used in synthesis of this molybdate. Thermal gravimetry and differential scanning calorimetry suggested that crystallization of beta-Gd-2(MoO4)(3) occurs at around 480 A degrees C. Phase-pure, orthorhombic beta-Gd-2(MoO4)(3) films were deposited on Pt/Ti/SiO2/Si(100) substrates. beta-Gd-2(MoO4)(3) films crystallized at 750 A degrees C showed a strong (00l) preferred orientation. The film dielectric constant measured was 10 similar to 14 and the dielectric loss was less than 3%. There was no marked signature in the permittivity at the bulk Curie temperature, approximately 159 A degrees C.