Piezoelectric effects in In0.5Ga0.5As self-assembled quantum dots grown on (311)B GaAs substrates

被引：45

作者：

Patanè, A ^{[1
]}

Levin, A

Polimeni, A

Schindler, F

Main, PC

Eaves, L

Henini, M

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] Univ Rome La Sapienza, Dipartimento Fis, Ist Nazl Fis Mat, I-00185 Rome, Italy

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 19期

关键词：

D O I：

10.1063/1.1322631

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photocurrent spectroscopy is used to investigate the quantum-confined Stark shift of In0.5Ga0.5As/GaAs self-assembled quantum dots grown on (100) and (311)B planes. By comparing the Stark shift for dots grown on (100) and (311)B planes, we find that in the (311)B dots, the electron and hole wave functions are displaced by a strain-induced piezoelectric field directed from the apex to the base of the dots. (C) 2000 American Institute of Physics. [S0003-6951(00)00345-4].

引用

页码：2979 / 2981

页数：3

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