Investigation on the electrical properties of amorphous Indium-Zinc-Titanium-Aluminum Oxide thin film transistors

被引：3
作者：
Jia, Lanchao [1 ]
Su, Jinbao [1 ]
Liu, Depeng [1 ]
Yang, Hui [1 ]
Li, Ran [1 ]
Ma, Yaobin [1 ]
Yi, Lixin [1 ]
Zhang, Xiqing [1 ]
机构：
[1] Beijing Jiaotong Univ, Inst Optoelect Technol, Key Lab Luminescence & Opt Informat, Minist Educ, Beijing 100044, Peoples R China
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2020年 / 106卷
基金：
中国国家自然科学基金;
关键词：
Thin film transistor; Oxide materials; Electrical properties; Saturation mobility; TEMPERATURE FABRICATION; ANNEALING TEMPERATURE; PERFORMANCE; SEMICONDUCTORS; STABILITY;
D O I：
10.1016/j.mssp.2019.104762
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We fabricated bottom-gate thin film transistors (TFTs) with Indium-Zinc-Titanium-Aluminum Oxide (IZTiAO) active layer by radio frequency (RF) magnetron sputtering at room temperature. The structural characteristic of the IZTiAO film was investigated by X-ray diffraction (XRD). The IZTiAO TFTs fabricated under optimal conditions exhibit excellent performance with a saturation mobility (mu(sat)) of 32.1 cm(2)/V.s, an on/off current ratio (I-on/off) of 8 x 10(8), an off current (I-off) of 5 x 10(-13)A, a low subthreshold swing(SS) of 0.23 V/dec and a threshold voltage (V-th) of 1.2 V, respectively. The shifts of the V-th of IZTiAO TFT under positive bias stress and negative bias stress were investigated.
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页数：5
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