Visualizing interfacial structure at non-common-atom heterojunctions with cross-sectional scanning tunneling microscopy

被引：77

作者：

Steinshnider, J

Weimer, M ^{[1
]}

Kaspi, R

Turner, GW

机构：

[1] Texas A&M Univ, Dept Phys, College Stn, TX 77843 USA

[2] USAF, Res Lab, AFRL, DELS, Albuquerque, NM 87117 USA

[3] MIT, Lincoln Lab, Lexington, MA 02173 USA

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.85.2953

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We describe how cross-sectional scanning tunneling microscopy (STM) may be used to image the interfacial bonding across the nearly lattice-matched, non-common-atom GaSb/InAs heterojunction with atomic-scale precision. The method, which takes advantage of the length difference between interfacial and bulk bonds, appears equally applicable to AlSb/InAs and suggests how one might recover the complete structure of either heterojunction from atomic-resolution STM data.

引用

收藏

页码：2953 / 2956

页数：4

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