Hydrogen as the cause of step bunching formed on vicinal GaAs(001)

被引：7

作者：

Hata, K ^{[1
]}

Shigekawa, H

Ueda, T

Akiyama, M

Okano, T

机构：

[1] Univ Tsukuba, Inst Appl Phys, CREST, Japan Sci & Technol Corp, Tsukuba, Ibaraki 3058573, Japan

[2] Oki Semicond Technol Lab Co Ltd, Hachioji, Tokyo 193, Japan

[3] Univ Tokyo, Inst Ind Sci, Tokyo 106, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 7B期

关键词：

scanning tunneling microscopy; diffusion and migration; growth; surface diffusion; surface structure; gallium arsenide; stepped single-crystal surface;

D O I：

10.1143/JJAP.39.4404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to elucidate the cause of step bunching formed on vicinal GaAs(001) annealed in AsH3/H-2 ambient, we investigated the surface of vicinal GaAs(001) annealed in H-2, AsH3/N-2, AsH3/H-2, and N-2 by scanning tunneling microscope. Since step bunches always formed on surfaces annealed with hydrogen but not on surfaces annealed in ambients without hydrogen, we conclude that hydrogen is crucial in the formation of step bunching.

引用

页码：4404 / 4407

页数：4

共 18 条

[1] INFLUENCE OF HYDROGEN ON THE STEP FLOW GROWTH OF GAAS ON VICINAL SURFACES BY GAS-SOURCE MIGRATION ENHANCED EPITAXY [J].

ASAHI, H ;

HISAKA, T ;

KIM, SG ;

KANEKO, T ;

YU, SJ ;

OKUNO, Y ;

GONDA, S .

APPLIED PHYSICS LETTERS, 1992, 61 (09) :1054-1056

[2] MULTIATOMIC STEP FORMATION MECHANISM OF METALORGANIC VAPOR-PHASE EPITAXIAL GROWN GAAS VICINAL SURFACES AND ITS APPLICATION TO QUANTUM-WELL WIRES [J].

FUKUI, T ;

ISHIZAKI, J ;

HARA, S ;

MOTOHISA, J ;

HASEGAWA, H .

JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) :183-187

[3] NATURAL SUPERSTEP FORMED ON GAAS VICINAL SURFACE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

FUKUI, T ;

SAITO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (03) :L483-L485

[4] Step bunching caused by annealing vicinal GaAs(001) in AsH3 and hydrogen ambient in its stationary state [J].

Hata, K ;

Shigekawa, H ;

Ueda, T ;

Akiyama, M ;

Okano, T .

PHYSICAL REVIEW B, 1998, 57 (08) :4500-4508

[5] Modeling step bunching formed on vicinal GaAs(001) annealed in AsH3 and hydrogen ambient [J].

Hata, K ;

Shigekawa, H ;

Okano, T ;

Ueda, T ;

Akiyama, M .

PHYSICAL REVIEW B, 1997, 55 (11) :7039-7046

[6] OBSERVATION OF STEP BUNCHING ON VICINAL GAAS(100) STUDIED BY SCANNING-TUNNELING-MICROSCOPY [J].

HATA, K ;

KAWAZU, A ;

OKANO, T ;

UEDA, T ;

AKIYAMA, M .

APPLIED PHYSICS LETTERS, 1993, 63 (12) :1625-1627

[7] Simulation and observation of the step bunching process grown on GaAs(001) vicinal surface by metalorganic vapor phase epitaxy [J].

Ishizaki, J ;

Ohkuri, K ;

Fukui, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B) :1280-1284

[8] NONRADIATIVE DARK REGIONS ALONG SURFACE RIPPLES IN GAP LPE LAYERS [J].

KAJIMURA, T ;

AIKI, K ;

UMEDA, J .

APPLIED PHYSICS LETTERS, 1977, 30 (10) :526-528

[9] SURFACE-DIFFUSION AND STEP-BUNCHING MECHANISMS OF METALORGANIC VAPOR-PHASE EPITAXY STUDIED BY HIGH-VACUUM SCANNING-TUNNELING-MICROSCOPY [J].

KASU, M ;

KOBAYASHI, N .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (05) :3026-3035

[10] X-RAY-ANALYSIS OF GAAS SURFACE RECONSTRUCTIONS IN H2 AND N2 ATMOSPHERES [J].

KISKER, DW ;

FUOSS, PH ;

TOKUDA, KL ;

RENAUD, G ;

BRENNAN, S ;

KAHN, JL .

APPLIED PHYSICS LETTERS, 1990, 56 (20) :2025-2027

← 1 2 →